▎ 摘　　要

NOVELTY - A light emitting device comprises a submount including a graphite layer having an upper surface and a lower surface that extend along a first direction and a second direction which are orthogonal to each other; a semiconductor laser device configured to emit laser light through an end surface in the first direction; and a base supporting the submount. The support layer is thicker than the graphite, and the upper surface of the support layer supports the lower surface of graphite. The graphite includes graphene structures that are layered in first direction, and each of the graphene structures extends in second direction. USE - Light emitting device e.g. edge-emission type semiconductor laser device used for devices such as processing machines, projectors, and illumination devices. ADVANTAGE - The light emitting device allows for reducing a temperature increase in an edge-emission type semiconductor laser device, and a method of manufacturing a submount that allows a heat generated by an edge emitting type laser device to be efficiently propagated to the outside. The light emitted from the edge emitting device is prevented from being absorbed by the graphite layer and the support layer, and thus, the heat generated in the semiconductor device is efficiently transferred to the surface of the submount. The heat generated from the laser device can be efficiently transferred from the surface to the lower surface of each of the graphene structures, and the heat can be effectively transferred to a portion of the support layers, thus, reducing the temperature increase of the light emitting devices. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for: (1) a method of manufacturing a submount; (2) a method of manufacturing a light emitting device.