▎ 摘　　要

NOVELTY - The laser diode has a semiconductor laser structure (20) including an active laser region and a semiconductor substrate structure (10). A layer of graphene (30) is located between the semiconductor laser structure and the semiconductor substrate. A first pair of electrode is provided to apply a potential difference across the active laser region and a second pair of electrode is provided to apply a potential difference across the layer of graphene. The graphene layer is set to extend continuously from a first side of active laser region to a second side of active laser region. USE - Semiconductor laser diode. ADVANTAGE - The optical characteristics of graphene are very responsive to changes in the voltage so that the structure provides quick modulation of the output laser power. The optical characteristics of graphene help to ensure that any laser light from the active laser region is passed through the graphene layer before entering the SOI. Since the optical absorption in the graphene layer occurs inside the laser cavity, the power consumption is much lower than for designs which use an external optical modulator outside of the laser. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of laser diode. Semiconductor substrate structure (10) Semiconductor laser structure (20) Graphene layer (30) Voltage source (50) Voltage bias (60)