▎ 摘　　要

NOVELTY - Constructing self-driven ultra-fast photoelectric detector based on van Dehua metal electrode comprises using silicon/silica substrate, two-dimensional metal iron germanium telluride, graphene and thin layer tungsten diselenide material heterojunction, where the silicon substrate is a silicon dioxide layer, the silicon oxide layer is a metal iron germanium telluride -semiconductor (tungsten diselenide) - metal (graphene) heterojunctions, and forming a vertical structure on the silicon dioxide base layer, and the two metal electrodes are respectively connected to the metal electrode through an electrode adhesion layer to form a source and a drain electrode. USE - The method is used for constructing self-driven ultra-fast photoelectric detector based on van der Waals metal electrode in imaging, optical communication, sensing and biomedicine. ADVANTAGE - The photoelectric detector has simple structure, dark current is almost zero, high response rate, fast response rate and high sensitivity.