▎ 摘　　要

NOVELTY - Graphene element (100) comprises a boron nitride layer (120) having a turbostratic structure, and a graphene layer (130) in contact with the boron nitride layer. USE - The graphene element is used as field effect transistor having top gate structure. ADVANTAGE - The graphene element suppresses variations in characteristics affected by solvent and resist residues used in transferring graphene. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the graphene element. 100Graphene element 110Substrate 111Silicon substrate 112Silicon oxide film 120Boron nitride layer 121Top surface 122Side surface 130Graphene layer 140Insulating layer 151Source electrode 152Drain electrode 153Gate electrode