• 专利标题:   Flexible pressure sensor capable of measuring underwater cross flow has convex rib array are provided with conductive silver working electrode block and lead-out wire, and glass substrate provided with flexible pressure sensing chip.
  • 专利号:   CN112484897-A, CN112484897-B
  • 发明人:   JIN Q, CHE X, YIN J, GAO W, ZHAO X
  • 专利权人:   UNIV NINGBO
  • 国际专利分类:   B81B007/02, B81C003/00, G01L009/02
  • 专利详细信息:   CN112484897-A 12 Mar 2021 G01L-009/02 202128 Pages: 15 Chinese
  • 申请详细信息:   CN112484897-A CN11077945 10 Oct 2020
  • 优先权号:   CN11077945

▎ 摘  要

NOVELTY - Sensor comprises a glass substrate (1) provided with a flexible pressure sensing chip (2). The flexible pressure sensing chip is formed by casting polydimethylsiloxane (PDMS) and conductive graphene composite material. The graphene is mixed into the PDMS by conductive nano particles. The flexible substrate is provided with a convex rib array formed by multiple convex ribs (4). A flexible substrate (3) is provided with a convex rib array formed by multiple convex ribs and the two sides of the convex rib array are respectively provided with a conductive silver working electrode block (5) and a lead-out wire. USE - Used as flexible pressure sensor capable of measuring underwater cross flow. ADVANTAGE - The sensor ensures that the flexible pressure sensing chip is formed by magnetic control sputtering to obtain the flexible pressure sensing chip and obtaining calibration function relationship. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: (1) manufacturing flexible pressure sensor comprising (a) selecting single-sided polished silicon wafer with surface as the raw material of the silicon substrate, where the surface flatness of the silicon wafer is less than 1um, carrying out oxidation treatment to the surface, forming a silicon oxide layer, (b) performing spin coating the photo resist layer on the front surface of the substrate after forming the silicon oxide layer, forming a photo resist layer, (c) photo etching and developing, preparing multiple windows on the silicon oxide layer, (d) using buffered oxide etching liquid wet etching silicon oxide layer, preparing the corrosion window, (e) using sulfuric acid and hydrogen peroxide mixed solution to remove the surface photo resist layer, (f) using 30 % potassium hydroxide corrosion liquid, under the temperature condition of 50 degrees C, performing anisotropic wet etching to the silicon substrate, preparing multiple tapered channel of micron size by controlling the corrosion rate and corrosion time to make the depth of the tapered channel reach the set value, (g) continuously using mixed solution of sulfuric acid and hydrogen peroxide to remove the silicon oxide layer, (h) carrying out oxidation treatment to one side surface of the multiple conical grooves, preparing single side oxide layer with uniform thickness, (i) subjecting the part covered by the oxide layer to dry etching by argon gas, leaving a part of the mold convex rib for display, preparing into a convex mold, (j) casting the vacuum polydimethylsiloxane on the silicon substrate, standing for half an hour, placing in 90 degrees C oven for 1 hours +/ - 2 minutes, demolding to obtain the polydimethylsiloxane material concave mold and (k) using acetone, alcohol, deionized water for ultrasonic cleaning, drying by nitrogen and using magnetic control sputtering technology on the surface sputtering a layer of 20nm thickness of aluminum layer; and (2) measuring underwater cross flow DESCRIPTION OF DRAWING(S) - The drawing shows a schematic representation of the flexible pressure sensor capable of measuring underwater cross flow. Glass substrate (1) Flexible pressure sensing chip (2) Flexible substrate (3) Convex rib (4) Conductive silver working electrode block (5)