• 专利标题:   Method for coating non-metallic surface for semiconductor device, involves obtaining graphene molecular precursor comprising substituted hydrocarbyl compound, depositing precursor on non-metal surface, reacting to form covalent bonds, and transforming deposited precursor into surface.
  • 专利号:   WO2023275873-A1
  • 发明人:   NAVEH D Y
  • 专利权人:   2D GENERATION LTD, UNIV BARILAN
  • 国际专利分类:   C01B032/15, C01B032/182, C23C014/06
  • 专利详细信息:   WO2023275873-A1 05 Jan 2023 C01B-032/182 202313 Pages: 72 English
  • 申请详细信息:   WO2023275873-A1 WOIL050701 29 Jun 2022
  • 优先权号:   US216004P, US245956P, US310307P

▎ 摘  要

NOVELTY - Method for coating a non-metallic surface involves obtaining at least one graphene molecular precursor (P1) comprising a substituted hydrocarbyl compound (A) (I), depositing the graphene molecular precursor (P1) on top of the non-metal surface to obtain a surface at least partially coated with the at least one graphene molecular precursor, and reacting the graphene molecular precursor with a non-metallic surface to form covalent bonds between at least a portion of the X1tethering groups and the non-metallic surface to obtain a non-metallic surface covalently linked to graphene molecular precursor, and transforming the deposited graphene molecular precursor (P1) into a surface bound graphene interfacial layer, to obtain a non-metallic surface covered by a graphene layer, where the non-metallic surface being covalently connected to the graphene layer. USE - Method for coating non-metallic surface for semiconductor device (claimed). ADVANTAGE - The method forms an effective diffusion barrier with improved conductivity, improved reliability, excellent thermal and chemical stability, excellent thermal conductivity, excellent adhesion to copper and to dielectrics, and fast, void-free, wafer-scale, high-yield deposition method. DETAILED DESCRIPTION - Method for coating a non-metallic surface involves obtaining at least one graphene molecular precursor (P1) comprising a substituted hydrocarbyl compound (A) of formula: G-X1kY1mY2n(I), depositing the graphene molecular precursor (P1) on top of the non-metal surface to obtain a surface at least partially coated with the at least one graphene molecular precursor, and reacting the graphene molecular precursor with a non-metallic surface to form covalent bonds between at least a portion of the X1tethering groups and the non-metallic surface to obtain a non-metallic surface covalently linked to graphene molecular precursor, and transforming the deposited graphene molecular precursor (P1) into a surface bound graphene interfacial layer, to obtain a non-metallic surface covered by a graphene layer wherein the non-metallic surface being covalently connected to the graphene layer. G=6-100C hydrocarbyl; X =tethering group capable of covalently binding to non-metallic surface; Y ,Y =H, halo, acidic functional group or basic functional group;and n,m,k=1-20. INDEPENDENT CLAIMS are included for the following: compound (I) for use as a graphene molecular precursor; graphene coated non-metallic surface, which comprises a covalent bond between the graphene and the non-metallic surface or between a molecule bound to the graphene and the non-metallic surface; emiconductor device, which comprises the graphene coated non-metallic surface; and method for monitoring graphene layer formation during manufacture process of graphene coating of a surface, which involves obtaining fluorescent microscope photos at intervals during the process, identifying fluorescence of a graphene molecular precursor as evidence for deposition of graphene molecular precursor, identifying reduction of fluorescence intensity of graphene molecular precursor as evidence for transformation of the graphene molecular precursor into graphene layer fluorescence incomplete process, and identifying reaching minimal fluorescence intensity as an end point of the manufacturing process of graphene layer coating of the non-metallic surface. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of products formed according to the coating method. 210Semiconductor substrate 230Graphene layer 435Covalent bonds 1000Product