▎ 摘　　要

NOVELTY - A molecular beam epitaxy chamber is mounted on a substrate, and the molecular beam epitaxy chamber is maintained at 500-860 degrees C and vacuum of 10-11 Torr. A carbon source is supplied on the substrate to form graphene layers by molecular beam epitaxy method. USE - Manufacture of graphene layer used for electronic circuit. ADVANTAGE - The method enables economical manufacture of layer of graphene having high purity.