▎ 摘　　要

NOVELTY - The sensor (100A) has an arrangement (110) of magnetic tunnel contacts arranged in columns and rows. The magnetic tunnel contacts comprise spin Hall effect type magnetic tunnel contacts comprising an insulator layer (124) between a free layer (125) and a pinned layer (123). The first lines (126) comprise a transparent conductive spin Hall effect material. Each first line crosses and in contact with the free layer of each magnetic tunnel junction in a corresponding row. The second lines (121) are electrically connected to the pinned layer of each magnetic tunnel junction in a corresponding column. The transparent, conductive spin Hall effect material comprises a heavy metal or graphene with a thickness of less than 3 nm. The second portions on opposite sides of the first portions comprise a metal or metal alloy material. The transparent conductive material comprises indium tin oxide (ITO), zinc oxide (ZnO) or graphene. USE - Complementary metal-oxide-semiconductors (CMOS) based image sensor with arrangement of optically switchable magnetic tunnel contacts. ADVANTAGE - The image sensors consume a significantly smaller chip area. The magnetic tunnel contacts (MTKs) are relatively small back-end-of-line (BEOL) data storage devices. The image sensors do not require any front-end-of-line (FEOL) devices within the arrangement. The MTKs are able to save captured image data that are captured during a global capture process up to a global reset process and without leakage problems. The arrangement has an intrinsic memory and is radiation hardened, so that the captured data does not have to be read immediately in order to avoid data loss. The global shutter effect is achieved as a result of the special bias conditions applied to the first and second lines during the global capture process. The global shutter effect is reinforced and improved defined through the use of on-demand radiation protection which specifically limits the time of radiation exposure. The accuracy is improved by the given location only is assigned to a high-intensity light. The image recording accuracy is statistically improved. The performance is optimized by different thicknesses for the insulator layer. The accuracy is improved by the given location is only then linked to high-intensity light. The image recording accuracy is statistically improved in response to the radiation exposure during a global acquisition process instead of the switching behavior of only a single pin transfer torque type MTK (STT-MTK) in a single MTK pixel. The STT-MTKs are designed as high-resistance devices to suppress the effects of leakage currents from unselected rows during the selective read. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view each depicting image sensors having optically switchable MTKs of the STT type. Image sensor (100A) Arrangement (110) Lines (121,126) Pinned layer (123) Insulator layer (124) Free layer (125)