• 专利标题:   Graphene utilization type LED, has gate electrode placed in light emission region, and insulating layer isolating electrode from light-emitting layer, where width of drain region in LED is broad from area-source in direction to drain region.
  • 专利号:   KR2009003526-A, KR1392451-B1
  • 发明人:   CHUNG H J, JUNG R J, KIM D C, LEE C W, SEO S A
  • 专利权人:   SAMSUNG ELECTRONICS CO LTD
  • 国际专利分类:   H01L033/00, H01L033/02
  • 专利详细信息:   KR2009003526-A 12 Jan 2009 H01L-033/00 200937 Pages: 7
  • 申请详细信息:   KR2009003526-A KR058575 14 Jun 2007
  • 优先权号:   KR058575

▎ 摘  要

NOVELTY - The LED has a gate electrode (114) placed in a light emission region (123), and an insulating layer (112) isolating the electrode from a light-emitting layer (120), where the light-emitting layer is formed by one among the group consisting of graphene, boron nitride, cadmiumtellurium, molybdenum disulfide and niobium die selenide. Width of a drain region (122) in the LED is broader from an area-source (121) in direction to the drain region. The light-emitting layer is formed with a layer of bismuth strontium calcium copper oxide, where the size of the LED lies between 5-20 nanometers. USE - Graphene utilization type LED. ADVANTAGE - The LED provides proper voltage to the area-source and drain region, and transition speed of the hole and electrons is nearly same, thus greatly improving luminous efficiency. The LED is compact. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a graphene utilization type LED. Insulating layer (112) Gate electrode (114) Light-emitting layer (120) Area-source (121) Drain region (122) Light emission region (123) Source electrode pad (131) Drain electrode pad (132)