▎ 摘　　要

NOVELTY - The transistor (100) has an emitter (102) with a tunnel diode, which permits tunnel current of charge carriers from the emitter in a direction of the collector when emitter-base voltage in a flow direction is above a threshold voltage. The base includes a graphene layer (106). An emitter-barrier layer (104) is arranged between the graphene layer and the emitter, and a collector-barrier layer (108) is arranged between the graphene layer and the collector. The emitter-barrier layer and/or the collector-barrier layer are polycrystalline or monocrystalline. USE - Unipolar hetero-junction depletion-layer transistor for use as a semiconductor component in a high frequency circuit utilized for broadband and wireless communications and radar and sensor applications. ADVANTAGE - The tunnel diode permits the tunnel current of the charge carriers from the emitter in the direction of the collector when the emitter-base voltage in the flow direction is above the threshold voltage, where the base includes the graphene layer, thus achieving operating frequencies of the depletion-layer transistor in teraHertz range. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic cross-sectional view of a unipolar hetero-junction depletion-layer transistor. Unipolar hetero-junction depletion-layer transistor (100) Emitter (102) Emitter-barrier layer (104) Graphene layer (106) Collector-barrier layer (108)