▎ 摘　　要

NOVELTY - The method involves preparing a substrate (100) including a first metal layer (110) and an insulating layer (120). An amorphous carbon layer (140) having a bonding structure is selectively formed on the first metal layer due to reactivity difference between the first metal layer and the insulating layer, where the carbon layer includes intrinsic graphene or nano-crystalline graphene including crystals having sizes of 0.5-100 nm. The second metal layer electrically connected to the first metal layer is formed, where reaction gas used in deposition process includes a carbon source, hydrogen gas and argon gas. USE - Method for forming an interconnect structure for semiconductor devices. ADVANTAGE - The method enables ensuring that a portion of the second metal layer is extended through an opening in the insulating layer and electrically connected to the first and second metal layers to form the interconnect structure in an effective manner. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of an interconnect structure with an intrinsic graphene, a nano-crystalline graphene and an amorphous carbon layer. Substrate (100) metal layer (110) insulating layer (120) amorphous carbon layer (140)