▎ 摘　　要

NOVELTY - Preparing graphene composite porous film by fractional laser treatment comprises (i) adding the graphene oxide solution prepared by the Hummers method into deionized water to prepare a graphene oxide dispersion, adding nitrate into deionized water and ultrasonically stirring until dissolving to obtain a nitrate solution, where the nitrate is manganese nitrate, cobalt nitrate, nickel nitrate and/or zinc nitrate, (ii) adding nitrate solution to graphene oxide dispersion to obtain a mixed and stable solution with nitrate concentration of 0.01-0.1 mol/l, dropping into a glass mold and drying naturally at room temperature and pressure forming a film to obtain a composite film, and (iii) using a semiconductor laser light source with a rated power of 4500 mW and a wavelength of 450 nm to perform a two-step scanning process on the composite film, decomposing nitrate into metal oxide particles and gas by photothermal effect of the laser and increasing porous structure in the composite film. USE - The method is useful for preparing graphene composite porous films by fractional laser treatment. ADVANTAGE - The method accurately and efficiently reduces the composite film, increases the porous structure and enhances the conductive ability and electrochemical performance of the composite film. DETAILED DESCRIPTION - Preparing graphene composite porous films by fractional laser treatment comprises (i) adding the graphene oxide solution prepared by the Hummers method into deionized water to prepare a graphene oxide dispersion, adding nitrate into deionized water and ultrasonically stirring until dissolving to obtain a nitrate solution, where the nitrate is manganese nitrate, cobalt nitrate, nickel nitrate and/or zinc nitrate, (ii) adding the nitrate solution to the graphene oxide dispersion to obtain a mixed and stable solution with a nitrate concentration of 0.01-0.1 mol/l, dropping into a glass mold and drying naturally at room temperature and pressure forming a film to obtain a composite film, and (iii) using a semiconductor laser light source with a rated power of 4500 mW and a wavelength of 450 nm to perform a two-step scanning process on the composite film, where the first step is in an ozone atmosphere, the power of the semiconductor laser is 2-15% of the rated power, the scanning rate is 1.2-1.4 cm/seconds, and the scanning time is 4-6 minutes, decomposing the nitrate into metal oxide particles and gas by the photothermal effect of the laser, increasing the porous structure in the composite film, where the second step is in an argon-hydrogen mixed atmosphere, in which the power of the semiconductor laser is 2-5% of the rated power; the scanning rate is 1.2-1.6 cm/seconds for 1-5 minutes, synergistically improving the conductivity of the composite film itself, thus improving the overall electrochemical performance.