• 专利标题:   Growing single-layer graphene useful in semiconductor device involves fixing copper foil on cathode, placing in acidic electrolyte, applying voltage between working and counter electrodes, placing copper foil and growing single layer graphene on both sides of copper foil by chemical vapor deposition.
  • 专利号:   CN115433920-A
  • 发明人:   SHEN H, MA Y
  • 专利权人:   ZHEJIANG CHINT ELECTRICS CO LTD, SHANGHAI XINCHI ENERGY TECHNOLOGY CO LTD
  • 国际专利分类:   C23C016/02, C23C016/26, C25F001/04
  • 专利详细信息:   CN115433920-A 06 Dec 2022 C23C-016/26 202302 Chinese
  • 申请详细信息:   CN115433920-A CN10622642 03 Jun 2021
  • 优先权号:   CN10622642

▎ 摘  要

NOVELTY - Growing single-layer graphene involves (a) fixing copper foil on cathode and placing in acidic electrolyte, applying voltage between working electrode and counter electrode and processing copper foil, (b) placing copper foil sequentially in deionized water and alcohol for cleaning, and blowing copper foil with nitrogen, and (c) placing the copper foil obtained in the step (b) between two layers of graphite sheet, and growing single layer graphene on both sides of the copper foil by chemical vapor deposition. USE - The method for growing single-layer graphene is useful in semiconductor device e.g. integrated circuit device. ADVANTAGE - The method enables to grow single-layer graphene that has high purity.