• 专利标题:   Cadmium telluride quantum dot grafted graphene-carbon nanotube composite film photo-switch material for preparing photoelectric converter, has graphene-carbon nanotube composite film with negative charge formed as substrate.
  • 专利号:   CN102338941-A, CN102338941-B
  • 发明人:   FENG W, FENG Y, PENG L
  • 专利权人:   UNIV TIANJIN
  • 国际专利分类:   B82Y020/00, G02F001/017
  • 专利详细信息:   CN102338941-A 01 Feb 2012 G02F-001/017 201216 Pages: 10 Chinese
  • 申请详细信息:   CN102338941-A CN10261698 06 Sep 2011
  • 优先权号:   CN10261698

▎ 摘  要

NOVELTY - The material has graphene-carbon nanotube composite film with negative charge formed as substrate. The substrate is statically self-assembled with poly diallyldimethylammonium chloride with positive charge and cadmium telluride quantum dot with negative charge, where diameter of the cadmium telluride quantum dot ranges from 4 to 6 nanometers. The substrate is ultrasonically washed with de-ionized water and ethanol, alternatively. The substrate is vacuum dried. A washed filter cake is loaded on the substrate. A dried substrate is soaked in acetone solution. USE - Cadmium telluride quantum dot grafted graphene-carbon nanotube composite film photo-switch material for preparing a photoelectric converter. ADVANTAGE - The material has simple preparation process and uniformly dispersed quantum dots on the film, better environmental adaptation, stable quality, and controllable electronic and optical properties by change of species of quantum dot and capacity of loaded quantum dots. The material has high photoelectric conversion rate. The material is used for preparing photoelectric converter having fast photo response performance. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a preparation method of cadmium telluride quantum dot grafted graphene-carbon nanotube composite film photo-switch material. DESCRIPTION OF DRAWING(S) - The drawing shows a photograph illustrating a cadmium telluride quantum dot grafted graphene-carbon nanotube composite film photo-switch material.