▎ 摘　　要

NOVELTY - A germanium quantum dot on a high-temperature graphene substrate directly growing method involves utilizing substrate layer, a graphene layer and a germanium quantum dot layer from bottom to top, growing germanium quantum dot layer by a sputtering deposition technique with a growth temperature of 100-590 degrees C for 100-500 seconds, followed by performing growth pause process. USE - Method for directly growing germanium quantum dot on a high-temperature graphene substrate. ADVANTAGE - The germanium quantum dot solves the problem of germanium dots prepared at room temperature do not crystallize, and has high density, small size, and better uniformity of the high-performance infrared photodetectors and other semiconductor optoelectronic device research and development.