• 专利标题:   Forming graphene single crystal domain on substrate, comprises contacting substrate with passivating gas to create low nucleation site density substrate, and contacting the resultant with working gas at first elevated temperature.
  • 专利号:   US2015292112-A1, US10072355-B2
  • 发明人:   COLOMBO L, RUOFF R S, HAO Y
  • 专利权人:   UNIV TEXAS SYSTEM, UNIV TEXAS SYSTEM
  • 国际专利分类:   C01B031/04, C30B025/18, C30B029/02, C30B033/02, C01B032/186
  • 专利详细信息:   US2015292112-A1 15 Oct 2015 C30B-025/18 201571 Pages: 27 English
  • 申请详细信息:   US2015292112-A1 US252953 15 Apr 2014
  • 优先权号:   US252953

▎ 摘  要

NOVELTY - Forming a graphene single crystal domain on a substrate, comprises: contacting the substrate with a passivating gas to decrease the number of nucleating sites on the substrate by at least 50% to create a low nucleation site density substrate; and contacting the low nucleation site density substrate with a working gas at a first elevated temperature, thus forming a graphene single crystal domain on the low nucleation site density substrate. USE - The process is useful for forming graphene single crystal domain on a substrate. ADVANTAGE - The process produces graphene single crystal domain: which is at least 100 mu m in size or at least 1 cm in size; and has density on the substrate 100 mm-2 or less (all claimed). DETAILED DESCRIPTION - INDEPENDENT CLAIM are also included for: (1) forming a graphene single crystal domain, comprising contacting an oxygen rich substrate having nucleation sites with a working gas at an elevated temperature, where the density of nucleation sites on the oxygen rich substrate is less than 100 mm-2, thus forming graphene single crystal domain on the oxygen rich substrate; and (2) forming a graphene single crystal domain, comprising contacting a low nucleation site density substrate with a working gas at an elevated temperature, where the density of nucleation sites on the low nucleation site density substrate is less than 100 mm-2, thus forming graphene single crystal domain on the low nucleation site density substrate.