▎ 摘　　要

NOVELTY - Forming a graphene single crystal domain on a substrate, comprises: contacting the substrate with a passivating gas to decrease the number of nucleating sites on the substrate by at least 50% to create a low nucleation site density substrate; and contacting the low nucleation site density substrate with a working gas at a first elevated temperature, thus forming a graphene single crystal domain on the low nucleation site density substrate. USE - The process is useful for forming graphene single crystal domain on a substrate. ADVANTAGE - The process produces graphene single crystal domain: which is at least 100 mu m in size or at least 1 cm in size; and has density on the substrate 100 mm-2 or less (all claimed). DETAILED DESCRIPTION - INDEPENDENT CLAIM are also included for: (1) forming a graphene single crystal domain, comprising contacting an oxygen rich substrate having nucleation sites with a working gas at an elevated temperature, where the density of nucleation sites on the oxygen rich substrate is less than 100 mm-2, thus forming graphene single crystal domain on the oxygen rich substrate; and (2) forming a graphene single crystal domain, comprising contacting a low nucleation site density substrate with a working gas at an elevated temperature, where the density of nucleation sites on the low nucleation site density substrate is less than 100 mm-2, thus forming graphene single crystal domain on the low nucleation site density substrate.