▎ 摘　　要

NOVELTY - The thin film transistor comprises a second electrode (152) located on the other side of the active layer,and a gate electrode (120). A gate insulating layer (130) positioned on the gate electrode. An active layer (140) positioned on a portion of the gate insulating layer and including a nitrogen-doped graphene layer. A first electrode (151) positioned on one side of the active layer. The nitrogen-doped graphene layer is a titanium layer deposited on the gate insulating layer in an oxygen-free atmosphere, and then a graphene layer is directly generated and doped'nitrogen-doped graphene layer. The gate electrode has a graphene layer. USE - Graphene-based thin film transistor used as a highly integrated semiconductor/transistor. ADVANTAGE - Ensures to reduce the manufacturing cost and improves product quality through simplification of the manufacturing process. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for manufacturing a graphene-based thin film transistor. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of the graphene-based thin film transistor used as a highly integrated semiconductor/transistor. Substrate (110) Gate electrode (120) Gate insulating layer (130) Active layer (140) First electrode (151) Second electrode (152)