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  • 专利标题:   Preparation of boron-doped graphene film comprises placing substrate in dual temperature zone system, then boron carbon solid source within dual temperature zone system and heating.
  • 专利号:   CN105714265-A
  • 发明人:   FANG X, CHEN X, WAN J, WANG C, YOU Y, XU Y
  • 专利权人:   SHANGHAI ADVANCED RES INST CHINESE ACAD
  • 国际专利分类:   C23C016/26
  • 专利详细信息:   CN105714265-A 29 Jun 2016 C23C-016/26 201667 Pages: 10 Chinese
  • 申请详细信息:   CN105714265-A CN10293309 05 May 2016
  • 优先权号:   CN10293309

▎ 摘　　要

NOVELTY - Preparation of boron-doped graphene film comprises placing substrate in dual temperature zone system, then boron carbon solid source within dual temperature zone system and heating. USE - Method for preparing boron-doped graphene film. ADVANTAGE - The method is simple with high quality film product and reduced reaction temperature, and saves energy consumption.