▎ 摘 要
NOVELTY - A silicon carbide substrate is provided. Germanium ion is injected to silicon carbide substrate by ion injection process. The obtained structure is annealed, and germanium injected-silicon carbide substrate is broken easily to silicon and carbide due to force. The silicon combines with germanium to form silicon-germanium structure, and carbon recombines to form graphene in silicon-germanium surface. USE - Preparation of graphene (claimed). ADVANTAGE - The method economically provides graphene having reduced energy consumption at low temperature and low pressure.