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  • 专利标题:   Preparation of graphene involves injecting germanium ion to silicon carbide substrate, annealing obtained structure, breaking silicon carbide substrate to silicon and carbon, combining silicon and germanium, and recombining carbon.
  • 专利号:   CN103523770-A, CN103523770-B
  • 发明人:   DI Z, CHEN D, DING G, WANG G, XIE X, ZHANG M, YE L, ZHENG X, LU Z
  • 专利权人:   SHANGHAI INST MICROSYSTEM INFORMATION
  • 国际专利分类:   C01B031/02, C23C014/06, C23C014/48, C23C014/58
  • 专利详细信息:   CN103523770-A 22 Jan 2014 C01B-031/02 201421 Pages: 8 Chinese
  • 申请详细信息:   CN103523770-A CN10492787 18 Oct 2013
  • 优先权号:   CN10492787

▎ 摘　　要

NOVELTY - A silicon carbide substrate is provided. Germanium ion is injected to silicon carbide substrate by ion injection process. The obtained structure is annealed, and germanium injected-silicon carbide substrate is broken easily to silicon and carbide due to force. The silicon combines with germanium to form silicon-germanium structure, and carbon recombines to form graphene in silicon-germanium surface. USE - Preparation of graphene (claimed). ADVANTAGE - The method economically provides graphene having reduced energy consumption at low temperature and low pressure.