▎ 摘　　要

NOVELTY - Memristor comprises a bilayer material having a first surface and a second surface, a first layer of a layered material provided directly on the first surface of the bilayer material and a second layer of the layered material provided directly on the second surface of the bilayer material. The first layer of the layered material has a lattice vector forming a first angle with a lattice vector of the bilayer material about a normal to the first surface. The second layer of the layered material has a lattice vector forming a second angle with the lattice vector of the bilayer material about a normal to the second surface. The first layer of the layered material and the bilayer material form a first moire acute accent pattern. The second layer of the layered material and the bilayer material form a second moire acute accent pattern; and the first angle is different than the second angle. USE - Memristor used in dual-gated graphene device. ADVANTAGE - The memristor enables information processing at very low energy cost, employs electronic devices with in-memory computing capability, which simulates the electrical behaviors of neural networks in the emerging neuromorphic computing paradigm with a high-density, low-power, multiple-state, programmable, and non-volatile nanoscale memory device. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for following: a dual-gated graphene device, which comprises a first hexagonal boron nitride layer, a second hexagonal boron nitride layer, a bernal-stacked bilayer graphene between the first and second hexagonal boron nitride layers, the first and second hexagonal boron nitride layers introducing a moire acute accent superlattice potential to the bilayer graphene, a first gate electrically coupled to the first hexagonal boron nitride layer and a second gate electrically coupled to the second hexagonal boron nitride layer; and a method for operating a memristor comprising a first hexagonal boron nitride layer, a second hexagonal boron nitride layer, and bilayer graphene between the first and second hexagonal boron nitride layers, the first and second hexagonal boron nitride layers introducing superlattice potential to the bilayer graphene, which involves applying a first voltage to the first hexagonal boron nitride layer and a second voltage to the second hexagonal boron nitride layer, the first voltage and the second voltage switching a resistance of the memristor from a first resistance to a second resistance different than the first resistance and applying a third voltage less than the first voltage to the first hexagonal boron nitride layer and a fourth voltage less than the second voltage to the second hexagonal boron nitride layer, the third voltage and the fourth voltage switching a resistance of the memristor from the second resistance to a third resistance.