▎ 摘　　要

NOVELTY - Fabricating a multilevel stacked graphene structure (297) comprises: (a) forming a first graphene level comprising at least one graphene stack (261) on a substrate (220), where the graphene stack in the first graphene level forms a first graphene based nanostructure; (b) depositing a first interlayer on the first graphene level; and (c) forming a second graphene level (262) comprising at least one graphene stack on the first interlayer, where the graphene stack in the second graphene level forms a second graphene based nanostructure. USE - The method is useful for fabricating a multilevel stacked graphene structure (claimed) used in multilevel graphene devices, electronic devices, composite materials, and energy generation and storage. ADVANTAGE - The method: provides graphene based thin films from layered materials and band gap devices formed without any requirement for patterning graphene; forms any number of composite type graphene devices, including multi-functionality and composite functionality (the combined properties of the graphene levels work to produce a common composite function), thus allowing more versatile and efficient band gap devices (solar devices), integration of broadband devices, increased efficiency by the design of elements to capture maximum peak wavelength energy, generation of neighboring effects of different functionality of graphene, reduced resistivity by use of more sheets, band gap tune ability, work function definition, denser packing of device, shorter mean free paths, better capture of photons and cascade devices; utilizes nanohole superlattice that tolerates defects better than an individual nanoribbon; and produces graphene stacks in one graphene level differ in some physical property from the graphene stacks in another graphene level, thus providing wide array of devices without any requirement to post process graphene once the graphene has been formed, which is a notoriously difficult particularly in the nanoscale dimensions. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: (1) the multilevel graphene stacks structure fabricated by the method; and (2) a structure comprising: a substrate; the first graphene level overlayed on the substrate, and comprising at least one graphene stack, where first graphene stack in the first graphene level forms a first graphene based nanostructure; the first interlayer overlayed on the first graphene level; and the second graphene level overlayed on the first interlayer and comprising at least one graphene stack, where a second graphene stack in the second graphene level forms a second graphene based nanostructure. DESCRIPTION OF DRAWING(S) - The figure shows a schematic view of graphical representations of multilevel stacked graphene structures with variable dimensions and layouts. Substrate (220) Graphene stack (261) Second graphene level (262) Third graphene level (264) Multilevel stacked graphene structures (297)