• 专利标题:   Lithium ion-doped graphene memristor has lamination of insulating substrate, lithium ion-doped graphene layer and two metal electrodes, where lithium ion-doped graphene layer and two metal electrodes are in contact each other.
  • 专利号:   CN104916777-A, CN104916777-B
  • 发明人:   LIN S, LI X, ZHENG Z
  • 专利权人:   UNIV ZHEJIANG
  • 国际专利分类:   H01L045/00
  • 专利详细信息:   CN104916777-A 16 Sep 2015 H01L-045/00 201602 Pages: 6 Chinese
  • 申请详细信息:   CN104916777-A CN10229169 08 May 2015
  • 优先权号:   CN10229169

▎ 摘  要

NOVELTY - A lithium ion-doped graphene memristor has lamination of insulating substrate (1), lithium ion-doped graphene layer (3) and two metal electrodes (2), or lamination of insulating substrate (1), two metal electrodes (2) and lithium-ion-doped graphene layer (3), such that lithium ion-doped graphene layer (3) and two metal electrodes (2) are in contact each other. USE - Lithium ion-doped graphene memristor (claimed). ADVANTAGE - The lithium ion-doped graphene memristor has excellent electrical property, and is manufactured efficiently and economically by simple method. The graphene material used during manufacture of lithium ion-doped graphene memristor has large surface area and high carrier rate. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of lithium ion-doped graphene memristor.