▎ 摘　　要

NOVELTY - Preparing laminated graphene involves placing silicon carbide (SiC) crystal into sealed reaction chamber, vacuumizing reaction chamber and introducing protective gas operation to discharge oxygen in reaction chamber; introducing the protective gas into reaction chamber to make reaction chamber consistent with external pressure, heating to 1000-1400℃ to remove impurities; introducing flow rate of protective 400-1000scccm, controlling pressure in 1-500mbar; and heating the SiC crystal to 1500-2500 ℃ to anneal for 10-50 hours at high temperature; making the reaction chamber consistent with the external pressure and cooling to obtain the laminated graphene. USE - Method for preparing laminated graphene. ADVANTAGE - The method is capable of efficiently preparing the laminated graphene with high vacuum degree to remove impurities and high purity and without torsion angle, and avoids the substrate growth, transferring from the substrate and using strong acid and strong alkali to etch reagent, and widens the application range of the graphene.