• 专利标题:   Etching solution useful for microelectronics comprises phosphoric acid, nitric acid, ultra-pure ammonium fluoride, triethanolammonium salt and water.
  • 专利号:   CN113549462-A
  • 发明人:   TANG X, GE Y, HE K
  • 专利权人:   JIANGYIN RUNMA ELECTRONIC MATERIAL CO
  • 国际专利分类:   C09D133/00, C09D005/08, C09K013/08
  • 专利详细信息:   CN113549462-A 26 Oct 2021 C09K-013/08 202220 Chinese
  • 申请详细信息:   CN113549462-A CN10664606 16 Jun 2021
  • 优先权号:   CN10664606

▎ 摘  要

NOVELTY - Etching solution comprises 15-20 pts. wt. phosphoric acid, 5-10 pts. wt. nitric acid, 8-20 pts. wt. ultra-pure ammonium fluoride, 3-8 pts. wt. triethanolammonium salt and 10-15 pts. wt. water. The preparation method of the ultra-pure ammonium fluoride comprises (1) heating industrial-grade liquid ammonia at 60-70degrees Celsius to release ammonia gas, adsorbing the ammonia gas by activated carbon to remove impurities, and adsorbing and deoxidizing to obtain high-purity ammonia gas, and (2) introducing high-purity ammonia gas and hydrogen fluoride into fluidized bed reactor, and performing reaction at temperature of 80-90degrees Celsius for 5-7 hours to obtain ultra-pure ammonium fluoride. USE - The etching solution is useful for microelectronics (claimed). ADVANTAGE - The anti-corrosive paint can well protect the fluidized bed reactor from being corroded by hydrofluoric acid. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for preparing etching solution, comprising taking phosphoric acid, nitric acid, ultra-pure ammonium fluoride, triethanolammonium salt and water, and uniformly mixing the raw materials.