▎ 摘　　要

NOVELTY - A graphene (408) is synthesized by implanting carbon in metal substrate via ion implantation, where carbon is distributed in metal substrate; annealing substrate with implanted carbon; cooling to precipitate carbon from metal (405) to form graphene layer on metal substrate surface; transferring with graphene layer into dielectric layer (401), where layer is placed on dielectric layer; and removing metal substrate. USE - Method of synthesizing graphene (claimed). ADVANTAGE - The method provides controlled quantities of carbon in metal, thus effectively growing graphene without the presence of hydrogen to reduce risk of defects. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a semiconductor device (400). DESCRIPTION OF DRAWING(S) - The drawing is a cross-sectional view of semiconductor device. Semiconductor device (400) Dielectric layer (401) Metal barrier (404) Metal (405) Graphene (408)