• 专利标题:   Manufacturing graphene useful in devices and laminate comprises growing graphene on single-crystal metal foil by supplying gaseous carbon source to single-crystal metal foil and exfoliating the graphene from single-crystal metal foil.
  • 专利号:   KR2023014666-A
  • 发明人:   RUOFF R S, WANG M, DARUO
  • 专利权人:   BASIC SCI INST, UNIST ULSAN NAT SCI TECHNOLOGY INST
  • 国际专利分类:   C01B032/186, C23C016/26
  • 专利详细信息:   KR2023014666-A 30 Jan 2023 C01B-032/186 202313 Pages: 23
  • 申请详细信息:   KR2023014666-A KR090099 21 Jul 2022
  • 优先权号:   KR095514

▎ 摘  要

NOVELTY - Manufacturing graphene comprises growing graphene on the single-crystal metal foil by supplying a gaseous carbon source to the single-crystal metal foil according to the condition as given in the specification. USE - The single-layer single-crystal graphene is useful in devices and laminate (all claimed). ADVANTAGE - The single-layer single-crystal graphene: is free from folding defects, grain boundaries, wrinkles and adlayers; does not substantially show the D-band peak on the Raman spectrum; is produced on a single crystal metal foil and prevents step bunching. The method: produces large-area high-quality graphene. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: ingle crystal graphene comprising single layer with a large area of /-25 cm2 and free from folding defects; and laminate comprising single-layer single-crystal graphene and a substrate supporting the single-layer single-crystal graphene.