▎ 摘　　要

NOVELTY - Controlled growth of graphene film comprises: preparing a substrate of a metal layer having a phase diagram with carbon, on surface, to obtain a homogeneous solid solution; exposing the metal layer to a controlled flow of carbon atoms/carbon radicals; and changing the phase of the mixture into two phases respectively of metal and graphite to form at least one lower graphene film located at interface:metal layer incorporating carbon atoms/substrate. USE - The process is useful for controlled growth of graphene film, in the field of electronics and visualization. ADVANTAGE - The process provides graphene film with good transparent and absorption property, good electrical conductivity and improved stability. The process is simple and reproducible. DETAILED DESCRIPTION - Controlled growth of graphene film comprises: preparing a substrate of a metal layer having a phase diagram with carbon at a threshold ratio of molar concentration of (CM/CM+Cc), where (CM) is molar concentration of metal in a metal mixture/carbon mixture and (Cc) is molar concentration of the carbon in the mixture, on the surface, for obtaining a homogeneous solid solution; exposing the metal layer to a controlled flow of carbon atoms or carbon radicals at a temperature such that the obtained molar concentration ratio is greater than the threshold ratio to obtain a solid solution of the carbon in the metal; and changing the phase of the mixture into two phases respectively of metal and graphite for forming at least one lower graphene film located at interface:metal layer incorporating carbon atoms/substrate.