▎ 摘　　要

NOVELTY - The wiring has a multilayer graphene (1) including graphene sheets laminated in a first direction. The graphene is extended in a second direction regarded as a longitudinal direction that intersects with the first direction. A first metal portion (2A) is in direct contact with the graphene. A second metal portion is spaced apart from the first metal portion in the second direction, and is in indirect contact with the graphene. A first conductive portion (3A) is disposed on the graphene in the first direction, and electrically connected to the graphene with the first metal portion interposed in between. A second conductive portion is disposed on the graphene in the first direction, and electrically connected to the graphene with the second metal portion interposed in between. The first metal portion, the graphene, and the second metal portion are interposed between the conductive portions. USE - Wiring for semiconductor device (claimed). Uses include but are not limited to a NAND flash memory (claimed), a resistance change-type storage device, a phase change-type storage device, or a magnetoresistive type storage device. ADVANTAGE - The multilayer graphene allows low-resistance and low-delay conductivity without being influenced by the connection area with the metal portion. Reliability of the wiring is improved by providing excellent contact property between the first metal portion and the first conductive portion. DETAILED DESCRIPTION - The first conductive portion and the second conductive portion are electrically connected to each other. A length of the graphene in the second direction is larger than distance between the metal portions. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional pattern diagram of the wiring. Multilayer graphene (1) First metal portion (2A) First conductive portion (3A)