▎ 摘　　要

NOVELTY - The method involves providing a monolayer chemical vapor deposition of graphene on a metal, and spin-coating a poly(methyl methacrylate)(PMMA) solution in anisole onto the graphene layer and air drying it. The metal on the reverse side of the graphene is removed by etching. The released graphene on PMMA film is separated and the film is rinsed consecutively in multiple clean deionized water baths. The film is placed onto a clean substrate and air dried. The PMMA is dissolved with a solvent. The graphene is patterned into a ribbon with e-beam lithography and oxygen. Silver is deposited in a thermal evaporator on the e-beam lithography in a defined central area of the graphene ribbon. The silver is transformed into one of silver chloride, silver bromide, and silver iodide by a reaction with chlorine gas, diatomic bromine, or diatomic iodine, respectively. USE - Manufacturing method of graphene-semiconductor based wavelength selective photodetector for sub-bandgap photo detection in various applications, such as imaging, spectroscopy, sensing and optical communications. ADVANTAGE - Wavelength-selective enhancement techniques, such as photonic structure, waveguide, micro-cavity, and metal plasmonic enhancement, can be applied, which promises great flexibility for designing color-sensitive photodetectors. DETAILED DESCRIPTION - After the transformation of the silver, aluminum oxide is coated by atomic layer deposition onto the structure. The aluminum oxide on the contact area is removed by dipping it in a buffered HF solution (BHF), and patterning a nickel electrode on the graphene ribbon with e-beam lithography followed by metal sputtering. The PMMA is cleaned. DESCRIPTION OF DRAWING(S) - The drawing shows images of a process flow for fabricating a graphene-semiconductor based wavelength selective photodetector.