▎ 摘　　要

NOVELTY - A controllable self-destructive resistive memory array implementing method involves preparing a graphene lower electrode, molybdenum trioxide dielectric layer and metal upper electrode, where the graphene is single layer or multiples of layers, and the molybdenum trioxide dielectric layer has a thickness between 2 nm and 1000 nm, forming a resistive memory array having self-rectifying characteristics during process of changing the resistive memory array from a high resistance state to a low resistance state, setting the extension level of the memory cell in the resistive memory array to 30 microseconds to 3 seconds, or increasing the voltage level of 0.5-10V, simultaneously applying the set time and voltage value to realize self-destruction of the resistive memory array. USE - Method for implementing controllable self-destructive resistive memory array for application prospects in the fields of micro-nanoelectronics and data storage. ADVANTAGE - The method enables implementing controllable self-destructive resistive memory array with characteristics of self-rectification and self-rectification elimination.