▎ 摘　　要

NOVELTY - The method involves forming an assist layer of a carbon material on a nano-thick membrane thin film (S10). The assist layer is selectively dry-etched (S20) with respect to the thin film to form a free-standing nanomembrane, where the carbon material is amorphous carbon, graphite, activated carbon, diamond, carbon, carbon black, nanocrystalline graphite and carbon nanotubes. The thin film is made of graphene and carbonized polymer. The assist layer is formed in a thin film and a thick film, where thickness of the assist layer is about 1-10 millimeter and dry etching comprises plasma etching, reactive ion etching and heat treatment. USE - Method for manufacturing a non-thick free-standing nanomembrane by using an assist layer of a carbon material. ADVANTAGE - The method enables improving etching selectivity, and improving integration of semiconductor devices and circuits. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a method for manufacturing a non-thick free-standing nanomembrane by using an assist layer of a carbon material(Drawing includes a non-English language text). S10Step for forming an assist layer of a carbon material on a nano-thick membrane thin film S20Step for selectively dry-etching the assist layer with respect to the thin film to form a free-standing nanomembrane