• 专利标题:   Graphene semiconductor junction device comprises substrate, gate electrode, gate insulating layer, graphene layer, semiconductor layer, drain electrode, and source electrode on graphene layer to be separated from semiconductor layer.
  • 专利号:   US2021167172-A1, KR2021067818-A
  • 发明人:   KIM K Y, KIM S Y, LEE B H, KIM K
  • 专利权人:   GWANGJU INST SCI TECHNOLOGY, GWANGJU INST SCI TECHNOLOGY
  • 国际专利分类:   H01L029/06, H01L029/16, H01L029/165, H01L029/66, H01L029/78, H01L051/05, H01L029/10
  • 专利详细信息:   US2021167172-A1 03 Jun 2021 H01L-029/16 202159 English
  • 申请详细信息:   US2021167172-A1 US090286 05 Nov 2020
  • 优先权号:   KR157819

▎ 摘  要

NOVELTY - A graphene semiconductor junction device comprises a substrate (10), a gate electrode (30) positioned on the substrate, a gate insulating layer (40) that is positioned on the substrate to cover the gate electrode, a graphene layer positioned on the gate insulating layer, a semiconductor layer that is positioned on the graphene layer so as not to be joined to an edge of the graphene layer, a drain electrode positioned on the semiconductor layer, and a source electrode that is positioned on the graphene layer to be separated from the semiconductor layer. USE - Graphene semiconductor junction device. ADVANTAGE - The graphene semiconductor junction device has improved on/off ratio and a voltage level by having a structure in which a graphene edge does not come into contact with a semiconductor. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a graphene semiconductor junction device. Substrate (10) Lower substrate (11) Upper substrate (12) Gate electrode (30) Gate insulating layer (40)