▎ 摘　　要

NOVELTY - A semiconductor structure comprises a nanofog oxide adhered to an inert two-dimensional or three-dimensional surface, or a weakly reactive metal surface, where the nanofog oxide comprises essentially 0.5-2 nm aluminum oxide nanoparticles. USE - Semiconductor structure for use in metal-insulator-metal (MIM) capacitor, FET, metal oxide semiconductor capacitors (MOSCAP), fin FET, and nanowire FET. ADVANTAGE - The semiconductor structure has improved dielectric properties, and forms aluminum oxide film with defect-free, and uniform characteristics.