▎ 摘　　要

NOVELTY - The method involves doping a substrate (102) with carbon for forming several doped zones (102-1-102-4) comprising several dopant profiles. Several graphene stacks (104-1-104-5) are generated in the doped zones. Each graphene stack is provided with a non-planar graphene layer having curvature, characteristic dimension, graphene orientation and graphene type. USE - Method for forming graphite-based device such as graphene quantum dots, graphene nanoribbons, graphene nano-networks, graphene plasmonics and graphene superlattices on substrate used in manufacture of solar cell and photodetector. ADVANTAGE - Controllable, reliable, and precise graphite-based device with enhanced functionalities is produced without patterning the graphene layers. DESCRIPTION OF DRAWING(S) - The drawing shows a plan view of graphite-based device during manufacture. Substrate (102) Doped zones (102-1-102-4) Graphene stacks (104-1-104-5)