▎ 摘　　要

NOVELTY - Producing (M1) graphene involves providing a layer of catalyst on a diamond surface, heating the diamond and/or catalyst layer with a heat source until a desired thickness of graphene is produced on the exposed surface of the catalyst. USE - For producing graphene useful in industrial processing; in switch/transistor, sensor, light detector or photovoltaic cell; in a device for conversion of energy from light to electricity; also useful for crystal matching to provide a three-component crystal structure that involves a semiconductor, metal and graphene, suitable for devices that involve the transport of electrons. ADVANTAGE - The method allows graphitic carbon of selected thickness to be grown with sub-monolayer precision by control of the temperature ramp. The process produces graphene of very high structural quality and in large amounts, at industrially realistic temperatures. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) a layer of graphene produced by method (M1); (2) a diamond having a surface, provided with a layer of catalyst for catalyzing the formation of a layer of graphene; and (3) a composition comprising graphene, a metal and diamond, where the metal is provided on a surface of the diamond.