▎ 摘　　要

NOVELTY - Preparation of a low-cost large area graphene transparent conductive film comprises dispersing a graphene oxide or graphite chip in a solvent to obtain 0.01-10 mass% solution; coating the solution on a substrate, volatilizing the solvent, and uniformly adhering the graphene oxide or graphite chip on the substrate; placing the film in an oxygen molecule and in a cavity under the protection of an inert gas, heating to 500-1500 degrees C, and recrystallizing at high temperature; cooling to room temperature; and transferring the graphene film to the transparent substrate. USE - Method for the preparation of a low-cost large area graphene transparent conductive film used for an electronic material. ADVANTAGE - The method uses high temperature recrystallization method to replace the traditional chemical vapor deposition method, thus avoiding the use of expensive high purity gas source. DETAILED DESCRIPTION - Preparation of a low-cost large area graphene transparent conductive film comprises: (A) dispersing a graphene oxide or graphite chip in a solvent to obtain 0.01-10 mass% solution; (B) coating the solution on a substrate, volatilizing the solvent, and uniformly adhering the graphene oxide or graphite chip on the substrate; (C) placing the film in an oxygen molecule and in a cavity under the protection of an inert gas, heating to 500-1500 degrees C, keeping high temperature for more than 10 minutes, and recrystallizing at high temperature; (D) quickly cooling to room temperature at 200 degrees C/minute; and (E) transferring the graphene film to the transparent substrate.