• 专利标题:   Method for rapidly preparing large-sized single crystal graphene, involves introducing pre-configured standard mixed gas into chemical vapor deposition system, carrying out chemical vapor deposition on surface of copper foil.
  • 专利号:   CN108441951-A
  • 发明人:   WANG S, GUO W, CHI K
  • 专利权人:   UNIV HUAZHONG SCI TECHNOLOGY
  • 国际专利分类:   C30B025/00, C30B029/02
  • 专利详细信息:   CN108441951-A 24 Aug 2018 C30B-029/02 201865 Pages: 9 Chinese
  • 申请详细信息:   CN108441951-A CN10404071 28 Apr 2018
  • 优先权号:   CN10404071

▎ 摘  要

NOVELTY - The method for rapidly preparing large-sized single crystal graphene, involves introducing pre-configured standard mixed gas into chemical vapor deposition system, carrying out chemical vapor deposition on the surface of the copper foil to obtain large-sized single crystal graphene. The standard mixed gas is selected from high purity methane, high purity hydrogen and/or high purity argon. The methane is used as a carbon source for graphene growth. The copper foil is used as a growth catalytic substrate for graphene. USE - Method for rapidly preparing large-sized single crystal graphene. ADVANTAGE - The method enables rapid preparation of large-sized single crystal graphene with increased purity and high repetition rate.