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  • 专利标题:   Method for forming film of graphene involves placing substrate in processing chamber at reduced pressure, performing surface treatment process on portion of substrate, and providing carbon-containing material in processing chamber.
  • 专利号:   WO2013126671-A1, TW201336784-A, US2014044885-A1, KR2014135725-A, EP2817261-A1, CN104136368-A, JP2015510489-W, SG11201404775-A1, US9150418-B2, US2015368111-A1, TW552954-B1, US2017044018-A1, CN104136368-B, SG10201607367-A1, CN106744866-A, EP2817261-A4, JP6262156-B2, JP2018074171-A
  • 发明人:   BOYD D A
  • 专利权人:   CALIFORNIA INST OF TECHNOLOGY, CALIFORNIA INST OF TECHNOLOGY, CALIFORNIA INST OF TECHNOLOGY, BOYD D A, CALIFORNIA INST OF TECHNOLOGY
  • 国际专利分类:   B01J019/12, C01B031/02, C07C009/04, C01B031/04, C23C016/26, C23C016/513, B01J019/08, B01J019/22, B82Y030/00, B82Y040/00, C23C014/02, C23C016/52, H01J037/32, H01L021/02, H01L029/16, H01L029/32, C01B032/186, C23C016/02, H01L021/205, H01L021/31
  • 专利详细信息:   WO2013126671-A1 29 Aug 2013 C01B-031/02 201359 Pages: 31 English
  • 申请详细信息:   WO2013126671-A1 WOUS027284 22 Feb 2013
  • 优先权号:   US603104P, US607337P, US677323P, US774188, KR725067, US838202, US246427

▎ 摘　　要

NOVELTY - Film of graphene is formed by placing substrate in processing chamber at reduced pressure, performing surface treatment process on greater than or equal to 1 portion of substrate, providing carbon-containing material in processing chamber, exposing substrate to carbon-containing material, and converting portion of carbon-containing material to film of graphene on substrate. USE - Method of forming film of graphene (claimed). ADVANTAGE - Graphene can be produced, without the need for a furnace, and rapid graphene growth can be achieved. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for: (1) method of forming graphene which involves providing substrate, subjecting substrate to reduced pressure environment, providing carrier gas, providing carbon source, exposing greater than or equal to 1 portion of substrate to carrier gas and carbon source, subjecting greater than or equal to 1 portion of substrate to surface treatment process, and converting portion of carbon source to graphene disposed on greater than or equal to 1 portion of substrate; and (2) system for graphene production which has gas sources (130, 132, 134), mass flow controllers (131, 133, 135), wherein each mass flow controller is coupled to one of gas sources, processing chamber (110) which is in fluid communication with mass flow controllers, plasma source (120) operable to form plasma in processing chamber, vacuum pump (146) in fluid communication with processing chamber, processor (172), and non-transitory computer-readable storage medium (174) comprising computer-readable instructions tangibly embodied on computer-readable storage medium, which, when executed by data processor, provide for graphene production, wherein instructions are instructions that cause data processor to subject substrate to reduced pressure environment, instructions that cause data processor to provide carrier gas and carbon source, instructions that cause data processor to expose greater than or equal to 1 portion of substrate to carrier gas and carbon source, instructions that cause data processor to perform surface treatment process on greater than or equal to 1 portion of substrate, and instructions that cause data processor to convert portion of carbon source to graphene disposed on greater than or equal to 1 portion of substrate. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of the system for graphene production. Processing chamber (110) Plasma source (120) Gas sources (130, 132, 134) Mass flow controllers (131, 133, 135) Vacuum pump (146) Processor (172) Computer-readable medium (174)