• 专利标题:   Visible-to-near infrared bandpass filter graphene photo detector, has detector main body provided with upper substrate, first film stack, photoelectric detector layer, silicon dioxide layer and second film stack.
  • 专利号:   CN111129181-A
  • 发明人:   LIU F, CAO J, ZHAO Y, HU G, YANG J, CAO D, SHI H
  • 专利权人:   UNIV SHANGHAI NORMAL
  • 国际专利分类:   H01L031/0232, H01L031/028, H01L031/09, H01L031/101
  • 专利详细信息:   CN111129181-A 08 May 2020 H01L-031/0232 202045 Pages: 9 Chinese
  • 申请详细信息:   CN111129181-A CN11266930 11 Dec 2019
  • 优先权号:   CN11266930

▎ 摘  要

NOVELTY - The detector has a detector main body provided with an upper substrate (1), a first film stack (2), a photoelectric detector layer, a silicon dioxide layer (5) and a second film stack (6), where material of the upper substrate is made of optical float glass. A photo detector layer is provided with a graphene layer (3), a metal electrode (4). The graphene layer is fixed on the first film stack. The metal electrode and the silicon dioxide layer are located at an upper side of the graphene layer. The silicon dioxide layer is located at a middle side of the metal electrode. USE - Visible-to-near infrared bandpass filter graphene photo detector. ADVANTAGE - The detector has high light responsiveness, and realizes easy compatibility with modern integrated circuits and narrow band filter function in visible to near infrared band. DESCRIPTION OF DRAWING(S) - The drawing shows a front view of a visible-to-near infrared bandpass filter graphene photo detector. Upper substrate (1) Film stacks (2, 6) Graphene layer (3) Metal electrode (4) Silicon dioxide layer (5)