▎ 摘　　要

NOVELTY - Producing nitrogen-doped graphene by plasma sputtering involves using de-ionized water, acetone and ethanol to ultrasonically wash reaction substrate for 30 minutes, and using high-purity gas to blow it dry; putting reaction substrate into chemical vapor deposition device, using chemical deposition method to grow monolayer/multi-layer graphene film on substrate layer; putting substrate after completely growing graphene into plasma sputtering device; doping nitrogen element ionized under high pressure to graphene structure; and corroding reaction substrate to obtain doped graphene. USE - For producing nitrogen-doped graphene by plasma sputtering (claimed) useful for catalyst research field e.g. solar battery and fuel battery. ADVANTAGE - The nitrogen-doped graphene featured with convenient operation during preparation and simple process, can be widely applied to large-scale industrial production, and is suitable for catalyst research field, such as solar battery and fuel battery. DETAILED DESCRIPTION - Producing nitrogen-doped graphene by plasma sputtering involves 1) orderly and respectively using de-ionized water, acetone and ethanol to ultrasonically wash reaction substrate for 30 minutes; 2) using high-purity gas to blow the reaction substrate dry, drying and standing it for 5-10 minutes; 3) putting the reaction substrate into a chemical vapor deposition device, charging reducing gas; heating a reaction furnace to 800-1100 degrees C within 30 minutes; 4) keeping the chemical vapor deposition device work for 40-80 minutes at high temperature; charging carbon-source gas to the chemical vapor deposition device; 5) reducing the temperature of the chemical vapor deposition device within 5 minutes, taking out the reaction substrate after completely growing the graphene; 6) putting the reaction substrate into a reaction cavity of a plasma sputtering device; using a vacuum pump to control the vacuum environment of the reaction cavity under 5 mTorr; 7) charging nitrogen-source gas to the reaction cavity, controlling operation pressure so the nitrogen-source gas ionizes the plasma nitrogen atoms, where the whole plasma discharging process is lasted for 5-25 minutes; 8) taking out the reaction substrate after finishing doping nitrogen to the graphene from the plasma sputtering device; and putting it in corrosion solution surface so the reaction substrate is completely corroded; 9) transferring the nitrogen-doped graphene to the surface of the de-ionized water; standing and washing it to obtain the clear nitrogen-doped graphene. DESCRIPTION OF DRAWING(S) - The figure shows a nitrogen-doped graphene scanning electron microscope (SEM) images.