▎ 摘　　要

NOVELTY - A field effect transistor comprises substrate; graphene layer configured on the substrate; source and drain electrodes configured to be in contact with graphene layer; and gate electrode disposed at a distance from the graphene layer and further configured to be capacitively coupled to graphene layer. The field effect transistor effects a change in low frequency noise upon exposure to a gas and/or vapor. USE - A field effect transistor for sensing vapors and/or gases used in a sensor module (claimed). ADVANTAGE - The field effect transistor can effect a change in low frequency noise upon exposure to a gas and/or vapor which can be used as a sensing parameter for selective detection of gases or vapors. The graphene-based sensor can detect gas molecules within a short period of time, can be reset for renewed sensing within a short time period, can detect various gases in ultra-low concentrations, exhibits excellent specificity to the gas to be detected, enables accurate differentiation of individual gases in a gas mixture, overcomes hysteresis phenomenon, is extremely reproducible and achieves very uniform responses, and can detect a broad range of gas molecules with high sensitivity and selectivity. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for: (1) sensor module for sensing vapors and gases comprising graphene field effect transistor that exhibits a change in low frequency noise in presence of a gas or vapor and signal processing module for measuring relative variance of 1/f noise of the graphene field effect transistor; and (2) detection of gases or vapors which involves exposing field effect transistor to vapor or gas, measuring a change in 1/f noise of the field effect transistor, and determining the presence of the vapor or gas.