▎ 摘　　要

NOVELTY - A graphene laminate comprises substrate, a semiconductor layer formed on the substrate, an interfacial adhesion layer formed on the semiconductor layer, and an electrode formed on the interfacial adhesive layer and comprising graphene. The semiconductor layer comprises a chalcogen compound (I). The interfacial adhesive layer adheres semiconductor layer and graphene, transition metal-chalcogen bond, transition metal-chalcogen bond, transition metal-carbon bond, and chalcogen-carbon bond. USE - Graphene laminate used for organic electronic device such as organic thin film transistor, organic solar cell, organic LED, organic memory device, photodetector, memristor, and varistor (all claimed). ADVANTAGE - The graphene laminate provides organic electronic device having excellent electrical properties. DETAILED DESCRIPTION - A graphene laminate comprises substrate, a semiconductor layer formed on the substrate, an interfacial adhesion layer formed on the semiconductor layer, and an electrode formed on the interfacial adhesive layer and comprising graphene. The semiconductor layer comprises a chalcogen compound of formula MX2 (I), where M is a transition metal element and X is a chalcogen element. The interfacial adhesive layer adheres semiconductor layer and graphene, transition metal-chalcogen bond, transition metal-chalcogen bond, transition metal-carbon bond, and chalcogen-carbon bond. An INDEPENDENT CLAIM is included for production of the graphene laminate, which involves (a) laminating a semiconductor layer on a substrate to prepare a substrate/semiconductor layer, (b) preparing substrate/semiconductor layer/graphene precursor layer by coating graphene precursor on the semiconductor layer of the substrate/semiconductor layer, (c) preparing a substrate/semiconductor layer/interface adhesive layer/crosslinked graphene precursor layer by irradiating UV or ozone on the graphene precursor layer of the substrate/semiconductor layer/graphene precursor layer, and (d) preparing an electrode comprising substrate/semiconductor layer/interface adhesive layer/graphene by placing metal catalyst on the crosslinked graphene precursor layer of the substrate/semiconductor layer/interface adhesive layer/crosslinked graphene precursor layer, and heat treating. The semiconductor layer comprises a chalcogen compound (I).