▎ 摘　　要

NOVELTY - The detector has a silicon dioxide layer that is provided with an etching window. A continuous platinum diselenide thin film layer is deposited in the etching window. The edge of the platinum diselenide thin film layer extends out of the etching window and is tiled on the upper surface of the silicon dioxide layer. An upper electrode is provided on the platinum diselenide thin film layer that is tiled on the upper surface of the silicon dioxide layer. A lower electrode is provided on the lower surface of the silicon layer. A graphene layer is provided on the upper surface of the platinum diselenide thin film layer covering the etching window. USE - Photoelectric detector based on graphene/platinum diselenide/silicon composite heterojunction. ADVANTAGE - The detector has a significant optical response to optical signals with wavelengths from 635-2700nm, and has the characteristics of high sensitivity, low dark current, fast response and good stability. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for preparing the photodetector based on graphene/platinum diselenide/silicon composite heterojunction. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic structural diagram of the photoelectric detector based on graphene/platinum diselenide/silicon composite heterojunction.