• 专利标题:   Ceramic structure for forming component of plasma processing apparatus, contains silicon carbide, silicon carbonitride, titanium carbide or titanium carbonitride as main component, and two main surfaces having different carbon concentration.
  • 专利号:   WO2022024906-A1, TW202219016-A, TW784647-B1, KR2023023779-A, JP2022540237-X, CN116194423-A
  • 发明人:   HAMASHIMA H
  • 专利权人:   KYOCERA CORP
  • 国际专利分类:   C04B035/56, C04B035/565, C04B035/58, H01B005/16, H01L021/67
  • 专利详细信息:   WO2022024906-A1 03 Feb 2022 202213 Pages: 30 Japanese
  • 申请详细信息:   WO2022024906-A1 WOJP027273 21 Jul 2021
  • 优先权号:   JP128492, KR701491, CN80060914

▎ 摘  要

NOVELTY - A ceramic structure (1) comprises silicon carbide, silicon carbonitride, titanium carbide or titanium carbonitride as a main component, and two main surfaces (11a) and (11b) opposite to each other. The carbon concentration is higher at the surface (11a) than at the surface (11b) as determined by element mapping using an electron beam microanalyzer. USE - Ceramic structure for forming component (claimed) of plasma processing apparatus. Can also be used for image forming apparatus, electromagnetic shield material, antistatic material, halation prevention component for electronic components quality inspection device, clamping jig for cleaning device, mounting table, flange receiving portion, semiconductor wafer transfer arm, peripheral sliding components, holding components, etc. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of ceramic structure. Ceramic structure (1) Main surfaces (11a,11b)