▎ 摘　　要

NOVELTY - The manufacturing method involves forming a graphene nano array (20a) on a protective layer. The protective layer is etched along a nanotube pattern and a graphene sheet. The resist layer and sacrificial layer is removed. The metal layer of the nanotube pattern is formed in a lower-side of the metal layer. The metal layer of a nano cup pattern is formed along the sidewall of a trench. The protective layer is adjacent to the graphene sheet. The hole pattern within the surface of the resist layer is formed. The substrate (10) is prepared, in which the graphene sheet is arranged. USE - Method for manufacturing graphene nano array and field-effect transistor including graphene nano array. ADVANTAGE - The manufacturing method involves forming a graphene nano array on a protective layer that is etched along a nanotube pattern and a graphene sheet, and thus ensures low manufacturing cost by using the nano imprint lithography, reduces the amount of the foreign substance, prevents the damage of the graphene sheet, easily arranges the graphene nano array of the field effect transistor. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of a graphene nano array. Substrate (10) Graphene nano array (20a)