• 专利标题:   Patterned graphene conductive film manufacturing method, involves performing flexible substrate cleaning and drying process, and performing graphene oxide film reduction operation to obtain patterned graphene conductive film.
  • 专利号:   CN103236295-A, CN103236295-B
  • 发明人:   HUANG L, WANG Z, LIN Y
  • 专利权人:   UNIV SHANGHAI NORMAL
  • 国际专利分类:   B41M001/10, H01B001/04, H01B013/00, H01B005/14
  • 专利详细信息:   CN103236295-A 07 Aug 2013 H01B-005/14 201375 Pages: 8 Chinese
  • 申请详细信息:   CN103236295-A CN10141227 23 Apr 2013
  • 优先权号:   CN10141227

▎ 摘  要

NOVELTY - The method involves performing flexible substrate cleaning and drying process by adopting an intaglio printing algorithm. Graphene oxide ink is injected on the flexible substrate. The flexible substrate is fixed with an oven for drying the graphene oxide ink on the flexible substrate to obtain a graphene oxide film. Graphene oxide film reduction operation is performed to obtain a patterned graphene conductive film. The flexible substrate is made of polyimide (PI), polyethylene terephthalate (PET) and paper material. The graphene oxide film is made of hydrazine hydrate and ammonia material. USE - Patterned graphene conductive film manufacturing method. ADVANTAGE - The method enables reducing conductive film manufacturing time consumption and production cost, improving yielding performance and realizing patterned graphene conductive film manufacturing process with high flexibility, high conductivity and high definition pattern by adopting a graphene oxide ink and gravure printing algorithm. DESCRIPTION OF DRAWING(S) - The drawing shows a photographic view illustrating a patterned graphene conductive film manufacturing method.