▎ 摘　　要

NOVELTY - The device has a connecting element (203) which is provided on conductive region (102) and is included with lower and upper surfaces. Lower surface is connected to conductive region. A graphene wiring (30) is connected to conductive region through connecting element and is provided to cover a partial area of upper surface of connecting element. Corrosion-proof element (302) is provided to cover an area different from partial area of upper surface of connecting element. Corrosion-resistant element is higher in corrosion resistance against a halogen compound than connecting element. USE - Semiconductor device. ADVANTAGE - The contact failure between graphene wiring and connection element is suppressed. DETAILED DESCRIPTION - The device has first insulating film which is arranged to surround a side surface of the connecting element. Second insulating film is arranged to surround a side surface of corrosion-resistant element. The graphene wiring is provided on corrosion-resistant element and is connected to conductive region through corrosion-resistant element and connecting element. A graphene layer (301) is provided with a halogen compound. The graphene wiring is extended in one direction. The center line of graphene wire is deviated from center line of connecting element in a cross section of connecting element and graphene wire in a plane perpendicular to one direction. The second insulating film is provided to cover an upper surface and a side surface of the graphene interconnection, and second insulating film is included with a void in a region corresponding to the side surface of graphene interconnection. An INDEPENDENT CLAIM is included for a method for manufacturing semiconductor device, which involves forming a connecting element in which a portion is exposed. The corrosion-resistant element is formed for covering the exposed portion of connecting element and is provided with higher corrosion resistance against halogen compounds than the connecting element. The graphene layer connected to connecting element is formed before or after forming the corrosion-resistant element. The dopant is introduced into the graphene layer after forming the corrosion-resistant element. DESCRIPTION OF DRAWING(S) - The drawing shows a top view of the semiconductor device. Graphene wiring (30) Conductive region (102) Connecting element (203) Graphene layer (301) Corrosion-proof element (302)