▎ 摘　　要

NOVELTY - The method involves reducing thickness of an initial membrane to obtain a first nanotube layer for a pellicle membrane, where the initial membrane comprises nanotubes having a minimum length of 1000 micrometers. The pellicle membrane is affixed to a mounting frame to obtain a pellicle assembly. A conformal coating is applied to an outer surface of the pellicle membrane, where the conformal coating comprises boron, boron nitride, boron carbide, boric oxide, silicon nitride, silicon carbide, silicon carbide yttrium, niobium, niobium nitride, niobium silicide, niobium silicon nitride, niobium oxide, niobium titanium yttrium, zirconium, zirconium yttrium, zirconium fluoride, zirconium disilicide, yttrium nitride, yttrium oxide, yttrium fluoride, molybdenum, molybdenum nitride, molybdenum monosiliside, molybdenum disilicide, ruthenium, rubidium, ruthenium silicon nitride, titanium nitride, hafnium oxide, hydrogen fluoride, hafnium fluoride and vanadium nitride. USE - Method for forming a pellicle assembly in a membrane stretching table (claimed) utilized in deep ultraviolet (UV) lithography for processing a semiconductor wafer substrate. ADVANTAGE - The method enables providing a photolithographic patterning process to reduce particle contamination on the photomask, thus reducing defects in the transferred pattern. The method allows the photoresist pattern to be transferred to the semiconductor wafer in an efficient manner, thus improving the quality of the pattern transferred from the photolithography process to the wafer, and hence improving the yield of the semiconducting device. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for: (1) a method for processing a semiconductor wafer substrate; (2) a membrane stretching table. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a pellicle assembly. 160Graphene membrane layer 250Pressing machine 252Bolster plate 254Ram 430Initial graphene layer