• 专利标题:   Heat-dissipation substrate for gallium nitride-based device, comprises substrate component provided with Van der Waals structure layer comprising gallium nitride layers and graphene layer made of single-layer graphene on substrate component.
  • 专利号:   CN113421865-A
  • 发明人:   YU C, SHEN N, QIN J, LU Y, LUO M
  • 专利权人:   UNIV NANTONG
  • 国际专利分类:   H01L021/02, H01L023/367, H01L023/373
  • 专利详细信息:   CN113421865-A 21 Sep 2021 H01L-023/367 202188 Pages: 8 Chinese
  • 申请详细信息:   CN113421865-A CN10685205 21 Jun 2021
  • 优先权号:   CN10685205

▎ 摘  要

NOVELTY - A heat-dissipation substrate comprises substrate component and Van der Waals structure layer on substrate component. The Van der Waals structure layer comprises at least two gallium nitride layers and a graphene layer between the two gallium nitride layers. The graphene layer is made of single-layer graphene. USE - Heat-dissipation substrate for gallium nitride-based device. ADVANTAGE - The heat-dissipation substrate has excellent performance and heat dissipation effect compared with existing epitaxial heat-dissipating substrate. The preparation method is economical and suitable for industrial production. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for preparation of the heat-dissipation substrate.