• 专利标题:   Method for transferring graphene wafer, involves forming graphene wafer on sapphire-metal substrate and peeling graphene wafer from metal substrate by performing electrochemical bubbling.
  • 专利号:   CN110581063-A
  • 发明人:   PENG H, LIU Z, YAN R, DENG B, TANG J, DU Y, CAI A
  • 专利权人:   BEIJING GRAPHENE INST
  • 国际专利分类:   H01L021/02
  • 专利详细信息:   CN110581063-A 17 Dec 2019 H01L-021/02 202004 Pages: 13 Chinese
  • 申请详细信息:   CN110581063-A CN11005855 22 Oct 2019
  • 优先权号:   CN11005855

▎ 摘  要

NOVELTY - A graphene wafer transferring method involves forming graphene wafer on sapphire/metal substrate and peeling graphene wafer from the metal substrate by performing electrochemical bubbling, where the sapphire/metal substrate is prepared by performing magnetron sputtering. USE - Method for transferring graphene wafer. ADVANTAGE - The method enables transferring graphene wafer by improving quality of graphene growth substrate and not undergoing breakage of bubble during transfer of graphene wafer.